SiO2-like film deposition on cu surface assisted by atmospheric pressure diffuse discharge

被引：0

作者：

Li W. ^{[1
]}

Wang R. ^{[2
]}

Zhang C. ^{[2
]}

Ren C. ^{[2
]}

Li J. ^{[1
]}

Shao T. ^{[2
]}

机构：

[1] Department of Electrical Engineering, Dalian University of Technology, Dalian, 116024, Liaoning Province

[2] Institute of Electrical Engineering, Chinese Academy of Sciences, Haidian District, Beijing

来源：

Shao, Tao (st@mail.iee.ac.cn) | 1600年 / Chinese Society for Electrical Engineering卷 / 36期

基金：

中国国家自然科学基金;

关键词：

Atmospheric pressure diffuse discharge; HMDSO; Point-to-plate electrode; Positive microsecond- pulse voltage; SiO[!sub]2[!/sub]-like film;

D O I：

10.13334/j.0258-8013.pcsee.161819

中图分类号：

学科分类号：

摘要：

Atmospheric pressure diffuse discharge can generate high power density and large-scale non-thermal plasmas, which is promising for film deposition on metal surface. The paper focused on the SiO2-like film deposition on Cu surface in atmospheric pressure. A positive microsecond- pulse power driven diffuse discharge with a point-to-plate electrode configuration was used for the film deposition. The hexamethyldisiloxane (HMDSO) was introduced as the precursor. The influences of discharge gases (Ar or air) on discharge process and deposited films' chemical composition were investigated by electrical, optical measurement, Fourier transform infrared spectroscopy (FTIR) and water contact angle measurement, respectively. From the experimental results, Ar discharge shows a higher discharge power and a stronger optical emission intensity as well as a higher deposit efficiency than that of air discharge when applied the same voltage. Moreover, air discharge deposited film characterizes a higher oxidation degree and presents a SiO2-like film with a water contact angle of 85°; but Ar discharge deposited film is an organ silicon film with a water contact angle of 100°. In addition, the highest oxidation degree is obtained with the air (700 sccm)/Ar (500 sccm) mixture, under which the water contact angle further reduces to 76°. It can be concluded that the atmospheric pressure diffuse discharge can be used for the SiO2-like film deposition on Cu surface. © 2016 Chin. Soc. for Elec. Eng.

引用

页码：6736 / 6742

页数：6

共 22 条

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