In-situ growth of graphene on a copper tip and its field emission property

被引：0
|
作者：
Tian, Kang [1 ]
Liu, Weihua [1 ]
Li, Xin [1 ]
Wei, Xianqi [1 ]
Wang, Xiaoli [1 ]
机构：
[1] School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an,710071, China
来源：
Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University | 2015年 / 49卷 / 08期
关键词：
Chemical vapor deposition - Sublimation - Field emission;
D O I：
10.7652/xjtuxb201508002
中图分类号：
学科分类号：
摘要：
Metal tips with low melting point suffer from sublimation during field emission. A layer of graphene in-situ on a submicron copper tip is synthesized to suppress the sublimation and to improve the field emission stability. A copper wire is etched in ferric trichloride solution to get a copper tip with submicron radius. Then a graphene layer is successfully synthesized on the copper tip by chemical vapor deposition. The copper tip is tested pre and after graphene growth. The field emission tests show that after the graphene growth, the turn-on field of the copper tip reduces from 4 V/μm to 2.5 V/μm while the current stability is improved. The results reported here is valuable for both the growth of graphene on a copper surface of sub-micron area and the improvement of field emission of graphene decorated metal tips. ©, 5015, Xi'an Jiaotong University. All right reserved.
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