Normally-off AlGaN/GaN high electron mobility transistors with thin and high Al composition barrier layers

被引：0
|
作者：
Zhang, Kai [1 ]
Mi, Minhan [1 ]
Chen, Yonghe [1 ]
Cao, Mengyi [1 ]
Wang, Chong [1 ]
Ma, Xiaohua [1 ]
Zhang, Jincheng [1 ]
Hao, Yue [1 ]
机构：
[1] State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
来源：
Japanese Journal of Applied Physics | 2013年 / 52卷 / 11 PART 1期
关键词：
541.1 Aluminum - 701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 721.3 Computer Circuits - 804.2 Inorganic Compounds - 951 Materials Science;
D O I：
10.7567/JJAP.52.111001
中图分类号：
学科分类号：
摘要：
30
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