Effect of trimethyl aluminium surface pretreatment on atomic layer deposition Al2O3 ultra-thin film on Si substrate

被引：6
|
作者：
Xu, Min [1 ]
Lu, Hong-Liang [1 ]
Ding, Shi-Jin [1 ]
Sun, Liang [1 ]
Zhang, Wei [1 ]
Wang, Li-Kang [1 ]
机构：
[1] State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
来源：
| 2005年 / IOP Publishing Ltd卷 / 22期
关键词：
13;
D O I：
10.1088/0256-307X/22/9/077
中图分类号：
学科分类号：
摘要：
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