共 50 条
- [1] PHOTOELECTRIC PROPERTIES OF GALLIUM ARSENIDE SOVIET PHYSICS-SOLID STATE, 1964, 5 (11): : 2383 - 2386
- [2] PHOTOELECTRIC EFFECTS IN SURFACE REGION OF GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (04): : 555 - +
- [3] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF EPITAXIAL FILMS OF GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 225 - &
- [4] PHOTOELECTRIC PROPERTIES OF GALLIUM-ARSENIDE ZINC SELENIDE HETEROSTRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (12): : 1389 - 1391
- [5] PHOTOELECTRIC PROPERTIES OF GALLIUM ARSENIDE WITH DISLOCATION GRAIN BOUNDARIES. Soviet physics. Semiconductors, 1983, 17 (05): : 552 - 554
- [6] A theoretical study of photofield emission in Gallium Arsenide 2016 INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, AND OPTIMIZATION TECHNIQUES (ICEEOT), 2016, : 8 - 12
- [7] EMISSION CURRENTS IN COMPENSATED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1217 - 1220
- [8] EMISSION FIELD INVESTIGATIONS OF GALLIUM-ARSENIDE ZHURNAL TEKHNICHESKOI FIZIKI, 1986, 56 (06): : 1183 - 1187
- [9] SOME PHOTOELECTRIC PROPERTIES OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE P-N HETEROJUNCTIONS SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 990 - +
- [10] PHOTOELECTRIC PROPERTIES OF GALLIUM-ARSENIDE WITH DISLOCATION GRAIN-BOUNDARIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (05): : 552 - 554