Schottky Diodes Based on Amorphous Ga2O3 Thin Films by UV-Ozone Treatment

被引：0
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作者：
Qingdao University, College of Microtechnology and Nanotechnology, Qingdao [1 ]
266071, China
机构：
来源：
IEEE Trans. Electron Devices | 2024年 / 11卷 / 6910-6914期
基金：
中国国家自然科学基金;
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D O I：
10.1109/TED.2024.3456772
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学科分类号：
摘要：
In this report, amorphous Ga2O3 thin film was prepared by magnetron sputtering, and the Schottky barrier diodes (SBDs) based on amorphous Ga2O3 thin films were fabricated. The electrical performances of the SBDs based on amorphous Ga2O3 thin films with different UV-ozone (UVO) treatment conditions were systematically studied. It is found that the oxygen vacancies at the interface of the SBDs can be suppressed by the UVO treatment. The UVO-optimized SBDs exhibit superior electrical performance, including the near-unity ideality factor of 1.12, a Schottky barrier height of 1.05 eV, and a high rectification ratio of 7.08 × 108. This method confirms the great potential for SBDs based on amorphous oxide semiconductors (AOSs) in the future. © 1963-2012 IEEE.
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页码：6910 / 6914
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