The effects of space radiation exposure on power MOSFETS: A review

被引：9
|
作者：
Shenai, K. [1 ]
Galloway, K.F. [2 ]
Schrimpf, R.D. [2 ]
机构：
[1] Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607, United States
[2] Elec. Eng. and Computer Science, Vanderbilt University, Nashville, TN 37235, United States
来源：
International Journal of High Speed Electronics and Systems | 2004年 / 14卷 / 02期
关键词：
Electric potential - Electron transitions - Field effect transistors - MOS capacitors - Radiation effects;
D O I：
10.1142/S0129156404002454
中图分类号：
学科分类号：
摘要：
Power MOSFETs are a commonly used device for many switching and power control applications. Their upper frequency limit spans a fairly broad range, from 1 MHz to 10 MHz. These devices are frequently used in spaceborne electronic systems where they encounter radiation exposure during operation. This paper reviews the current technology, its high frequency capability, the future trends for power MOSFET technology, and the degradation that the power VDMOS technology experiences in the space radiation environment.
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收藏
页码：445 / 463
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