Coulomb correlation and tunneling effects in single and double V-groove quantum wire LEDs

被引：0
|
作者：
Weman, H. [1 ]
Martinet, E. [1 ]
Dupertuis, M.-A. [1 ]
Rudra, A. [1 ]
Leifer, K. [1 ]
Kapon, E. [1 ]
机构：
[1] Swiss Federal Inst of Tech, Lausanne, Switzerland
来源：
Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series | 2000年
关键词：
Carrier concentration - Current voltage characteristics - Electroluminescence - Electron transitions - Electron tunneling - Ground state - Magnetic field effects - Nonlinear equations - Photoluminescence - Semiconducting gallium arsenide - Semiconductor quantum wires - Transmission electron microscopy;
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摘要：
The electroluminescence (EL) in GaAs/AlGaAs V-groove quantum wire (QWR) diodes containing self-ordered vertical quantum wells (VQWs) has been previously studied. This article discusses the most recent results, which include diodes with double-QWRs and high-magnetic field studies.
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页码：76 / 77
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