Two-dimensional analysis of electrical behavior in composite semiconductor shell structures with magnetic field tuning

被引:0
|
作者
State Key Laboratory of Mechanics and Control for Aerospace Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, China [1 ]
不详 [2 ]
213300, China
不详 [3 ]
518057, China
不详 [4 ]
315211, China
不详 [5 ]
125009, Russia
不详 [6 ]
621000, China
机构
来源
J Appl Phys | 2024年 / 11卷
基金
中国国家自然科学基金;
关键词
Electrical behaviors - Interaction mechanisms - Magnetic-field - Magnetoelectrics - Piezoelectric semiconductors - Property - Semiconductor shell - Shell structure - Third-order shear deformation theory - Two-dimensional analysis;
D O I
暂无
中图分类号
学科分类号
摘要
To precisely investigate the electric properties and reveal the intrinsic interaction mechanisms between multiple fields in the composite magneto-electric-semiconductor shell structure, two-dimensional analyses were conducted within the framework of the third-order shear deformation theory and the coupled field theory. The governing equations for the composite piezoelectric semiconductor (PS) shell structures were derived using the principle of virtual work. Field distributions of the composite PS shell structures were obtained by expanding basic field quantities into Fourier series along the width direction and using the differential quadrature method. Prior to analysis, the convergence and correctness of the adopted method were evaluated. Several numerical examples were presented to demonstrate how magnetic manipulation can tune electrical behavior. It was found that inhomogeneous shear strain induced by applied magnetic fields is the key factor affecting potential variation in the composite PS shells. The appearance of potential barriers and wells in the composite PS shell structure with an opposite c axis is explained thoroughly. Additionally, the effect of magnetic field non-uniformity on the composite PS shell structure was investigated using an equivalent body force model, offering valuable insights for designing thin-film devices. © 2024 Author(s).
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