Heavily doped Si film prepared by electron beam evaporation and its application in low-e glass

Heavily doped Si films were prepared by electron beam evaporation on conventional glass. The properties, surface morphologies, composition and optical transmission, were characterized and analyzed through SEM, EDS and spectra. Furthermore, the deposited heavily doped Si films were treated by the method of Al-induced low-temperature crystallization with firstly deposited Al film on glass substrate. The XRD measurement, electrical and optical properties testing results revealed that when the temperature is above 300°C, the peak Si(111) appeared and electrical conductance increases of the Si film. Meanwhile, the crystallized Si film processes good visible light transmission, with enhanced heat reflective properties, which indicates that these Si films have potential application value in low-emissivity glass. Moreover, the Ag-based low-e glass with the structure of glass/Si/Ag/Si was prepared by electron beam evaporation and a series of testing results showed Si film can protect the low-e film in some condition.