共 50 条
- [3] Higher than 90% internal quantum efficiency of photoluminescence in GaN:Si,Zn PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3, 2013, 10 (03): : 507 - 510
- [5] Determination of zinc concentration in GaN:Zn,Si from photoluminescence PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3, 2013, 10 (03): : 523 - 526
- [7] Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals GALLIUM NITRIDE MATERIALS AND DEVICES XI, 2016, 9748
- [9] Absolute quantum cutting efficiency of Tb3+-Yb3+ co-doped glass 1600, American Institute of Physics Inc. (114):