Design and characteristics of C-band resonant relativistic backward-wave oscillator

被引:0
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作者
Zhang J. [1 ]
Jin Z. [1 ]
Zhong H. [1 ]
Shu T. [1 ]
Zhou S. [1 ]
机构
[1] College of Opto-Electronic Science and Engineering, National University of Defense Technology
关键词
C-band; High power microwave; Longitudinal resonant mode; Relativistic backward-wave oscillator;
D O I
10.3788/HPLPB20102210.2397
中图分类号
学科分类号
摘要
A C-band resonant relativistic backward-wave oscillator(RBWO) is designed, and its structure feature and operation mechanism are analyzed. Operation characteristics of the designed device were investigated by particle-in-cell(PIC) simulation. Simulation results indicate that both the length of the insert and the radius of the reflector influence the power efficiency of the device. With the diode voltage ranging from 500 kV to 1 MV, the efficiency of designed device remains 20%~25%, while the generated microwave frequency keeps around 4.25 GHz. Furthermore, according to the analysis on the electrodynamics characteristics of the device, the longitudinal resonant modes and corresponding quality factors are studied with emphasis, which reveals that the device has a high efficiency with operation mode of 2π/5 mode and quality factor of about 100. The research results explain the reasons of the resonant RBWO possessing features of adopting to wide electron beam energy range and stable radiation frequency, and verify the general design principle of this kind of device.
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页码:2397 / 2402
页数:5
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