Temperature dependence of photoluminescence of α-Ga2O3 powders

被引：0
|
作者：
Cho, Sungryong [1 ]
Lee, Jongwon [1 ]
Park, In Yong [1 ]
Kim, Seontai [1 ]
机构：
[1] Department of Mat. Science and Eng., Hanbat National University, Daejon 305-719, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 08期
关键词：
D O I：
10.1143/jjap.41.5237
中图分类号：
学科分类号：
摘要：
21
引用
收藏
页码：5237 / 5240
相关论文
共 50 条
  • [1] Temperature dependence of photoluminescence of α-Ga2 O3 powders
    Cho, S
    Lee, J
    Park, IY
    Kim, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (08): : 5237 - 5240
  • [2] Origin of photoluminescence in ß-Ga2O3
    Quoc Duy Ho
    Frauenheim, Thomas
    Deak, Peter
    PHYSICAL REVIEW B, 2018, 97 (11)
  • [3] Temperature Dependence of Anisotropic Complex Conductivity of β-Ga2O3
    Wang, Ke
    Serita, Kazunori
    Murakami, Hironaru
    Tonouchi, Masayoshi
    JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 2022, 43 (7-8) : 612 - 627
  • [4] Temperature Dependence of Anisotropic Complex Conductivity of β-Ga2O3
    Ke Wang
    Kazunori Serita
    Hironaru Murakami
    Masayoshi Tonouchi
    Journal of Infrared, Millimeter, and Terahertz Waves, 2022, 43 : 612 - 627
  • [5] Temperature dependence of Ga2O3 growth by halide vapor phase epitaxy on sapphire and β-Ga2O3 substrates
    Goto, Ken
    Nakahata, Hidetoshi
    Murakami, Hisashi
    Kumagai, Yoshinao
    APPLIED PHYSICS LETTERS, 2020, 117 (22)
  • [6] Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3(Gd2O3)/GaAs
    Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
    不详
    不详
    Appl Phys Lett, 14 (2038-2040):
  • [7] Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3(Gd2O3)/GaAs
    Tu, LW
    Lee, YC
    Lee, KH
    Lai, CM
    Lo, I
    Hsieh, KY
    Hong, M
    APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2038 - 2040
  • [8] Photoluminescence and Raman mapping of β-Ga2O3
    Remple, Cassandra
    Huso, Jesse
    McCluskey, Matthew D.
    AIP ADVANCES, 2021, 11 (10)
  • [9] Fabrication and photoluminescence of β-Ga2O3 nanorods
    Xu, Qingjun
    Zhang, Shiying
    SUPERLATTICES AND MICROSTRUCTURES, 2008, 44 (06) : 715 - 720
  • [10] Annealing temperature dependence of band alignment of NiO/β-Ga2O3
    Xia, Xinyi
    Li, Jian-Sian
    Chiang, Chao-Ching
    Yoo, Timothy Jinsoo
    Ren, Fan
    Kim, Honggyu
    Pearton, S. J.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (38)
12345