Dislocation density of MBE grown HgCdTe on ZnCdTe substrates

被引：0
|
作者：
Yu, Meifang [1 ]
Wu, Yan [1 ]
Chen, Lu [1 ]
Qiao, Yimin [1 ]
Yang, Jianrong [1 ]
He, Li [1 ]
机构：
[1] Res. Cent. for Adv. Mat. and Devices, Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., Shanghai 200083, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics | 2002年 / 22卷 / 02期
关键词：
Dislocations (crystals) - Epitaxial growth - Substrates;
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学科分类号：
摘要：
This paper describes the results on dislocation density of MBE grown LW HgCdTe on ZnCdTe substrates. It was found that the dislocation density in HgCdTe was sensitive to the surface damage of ZnCdTe substrates, growth conditions as well as compositions. By optimizing the substrate preparation procedures and growth conditions, the averaged EPD value of 4.2 × 105 cm-2 with the standard deviation of 3.5 × 105 cm-2 was obtained, closing to the substrate dislocation limit. The reproducibility was good with a yield of 73.7% as screened by dislocation density. The results should be able to meet the requirements for FPAs of high performance.
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页码：215 / 218
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