Synthesis of ZnO crystals by chemical vapor transport method

被引：0
|
作者：
Wei, Zhi-Ren [1 ]
Li, Zhen-Jun [1 ]
Gao, Ping [1 ]
Yin, Li-Jun [2 ]
Huang, Cun-Xin [2 ]
Zhang, Li-Ming [1 ]
Yao, Jin-Bao [1 ]
机构：
[1] College of Physics Science and Technology, Hebei University, Baoding 071002, China
[2] Bright Crystals Technology Inc., Beijing 100018, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2009年 / 38卷 / 02期
关键词：
Aluminum oxide - Sapphire - Alumina - Variable speed transmissions - Zinc oxide - Atmospheric movements - II-VI semiconductors;
D O I：
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中图分类号：
学科分类号：
摘要：
ZnO crystals were synthesized on Al2O3-(0001) wafer by chemical vapor transport (CVT) process in open atmospheric system using ZnO powder as material, NH4Cl as transport agent, O2and H2O vapor as reactant and proper quantity of HCl as eroding vapor. ZnO crystals, along (1010) and (0002) direction, were synthesized by adjusting the quantity of NH4Cl. The results show that the crystals along (0002) direction were hexagonal, and the growth speed along a-axis and b-axis were obviously faster than c-axis. Epitaxial growth crystals on the wafer showed large area of c-facet which paralleled c-facet of sapphire. The effect of O2, H2O, NH4Cl, HCl and crystal growth mechanism were also been discussed.
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页码：346 / 349
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