Optical characteristics of InAs/InGaAsP/InP self-assembled quantum dots emitting at 1.4-1.6 μm

被引：0

作者：

Lee, Uk Hyun ^{[1
]}

Yim, Jeong Soon ^{[1
]}

Lee, Donghan ^{[1
,4
]}

Jeong, Weon Guk ^{[2
]}

Hwang, Eui Hyun ^{[3
]}

Rhee, Do Young ^{[3
,4
]}

Sim, Jae Sik ^{[3
]}

Dapkus, Paul Daniel ^{[1
]}

Lee, Byung Taek ^{[2
]}

机构：

[1] Department of Physics, Chungnam National University, Taejon 305-764, Korea, Republic of

[2] Department of Materials Engineering, Sungkyunkwan University, Suwon, Korea, Republic of

[3] Department of Electrical Engineering-Electrophysics, University of Southern California, Los Angeles, CA, United States

[4] Department of Materials Engineering, Chonnam National University, Kwangjoo, Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 2 A期

关键词：

Optical properties - Photoluminescence - Self assembly - Semiconducting gallium arsenide - Semiconducting indium phosphide - Semiconductor growth - Thermal effects;

D O I：

10.1143/jjap.41.524

中图分类号：

学科分类号：

摘要：

InAs/InGaAsP quantum dots (QD) grown on InP substrates show strong photoluminescence (PL) signals, with peaks from 1.4 to 1.6 μm at room temperature. Time-resolved PL measurements reveal that carrier lifetimes are the same across the entire PL band at low temperature, as well as at room temperature. This is strong evidence that the PL originates from the inhomogeneously broadened states of well-isolated QDs even at room temperature. These good characteristics, with the availability of additional InGaAsP confinement layers of different band gaps, make the present QD system a good candidate for low threshold lasers at 1.5 μm.

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页码：524 / 527

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