Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance

被引:0
|
作者
机构
[1] Hur, Ji-Hyun
[2] Kim, Deok-Kee
来源
| 1600年 / American Institute of Physics Inc.卷 / 122期
基金
新加坡国家研究基金会;
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance
    Hur, Ji-Hyun
    Kim, Deok-kee
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (23)
  • [2] Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors
    Hur, Ji-Hyun
    Kim, Deok-Kee
    NANOTECHNOLOGY, 2018, 29 (18)
  • [3] Improving performance of armchair graphene nanoribbon field effect transistors via boron nitride doping
    Goharrizi, A. Yazdanpanah
    Sanaeepur, M.
    Sharifi, M. J.
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 85 : 522 - 529
  • [4] Computational study of bilayer armchair graphene nanoribbon tunneling Computational study of bilayer armchair graphene nanoribbon tunneling field-effect transistors for digital circuit design field-effect transistors for digital circuit design
    Shamloo, H.
    Goharrizi, A. Yazdanpanah
    DIAMOND AND RELATED MATERIALS, 2025, 151
  • [5] Performance Evaluation of Dual-Channel Armchair Graphene Nanoribbon Field-Effect Transistor
    Azman, Adila Syaidatul
    Johari, Zaharah
    Ismail, Razali
    2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE), 2014, : 138 - 141
  • [6] Effect of fabrication process on contact resistance and channel in graphene field effect transistors
    Khosravi Rad, Babak
    Mehrfar, Amir Hossein
    Sadeghi Neisiani, Zahra
    Khaje, Mahdi
    Eslami Majd, Abdollah
    SCIENTIFIC REPORTS, 2024, 14 (01):
  • [7] Modeling of Armchair Graphene Nanoribbon Tunnel Field Effect Transistors for Low Power Applications
    Suhendi, E.
    Hasanah, L.
    Noor, F. A.
    Kurniasih, N.
    Khairurrijal
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2019, 19 (04) : 336 - 346
  • [8] Computational study of bilayer armchair graphene nanoribbon tunneling field-effect transistors for digital circuit design
    Shamloo, H.
    Yazdanpanah Goharrizi, A.
    Diamond and Related Materials, 2025, 151
  • [9] Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors
    Kang, Jiahao
    He, Yu
    Zhang, Jinyu
    Yu, Xinxin
    Guan, Ximeng
    Yu, Zhiping
    APPLIED PHYSICS LETTERS, 2010, 96 (25)
  • [10] A computational study of ballistic graphene nanoribbon field effect transistors
    Noei, Maziar
    Moradinasab, Mandi
    Fathipour, Morteza
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 44 (7-8): : 1780 - 1786