Characteristic study on MOCVD-InAs/GaSb DBR

被引：0
|
作者：
Jiang, Hong [1 ]
Jin, Yi-Xin [1 ]
Song, Hang [1 ]
Miao, Guo-Qing [1 ]
机构：
[1] Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2005年 / 34卷 / 06期
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页码：1030 / 1034
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