Effect of zirconium on the microstructure and electrical properties of Cr-Si-Al resistive films

被引：0
|
作者：
Dong, Xian-Ping [1 ]
Lin, Ze-Wei [1 ]
Wu, Jian-Sheng [1 ]
Mao, Li-Zhong [1 ]
机构：
[1] Lab. for High Temp. Mat., Shanghai Jiaotong Univ., Shanghai 200030, China
来源：
Shanghai Jiaotong Daxue Xuebao/Journal of Shanghai Jiaotong University | 2003年 / 37卷 / 02期
关键词：
Crystallization - Dynamic mechanical analysis - Electric properties - Microstructure - Zirconium;
D O I：
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学科分类号：
摘要：
The microstructure and electrical properties of annealed Cr-Si-Al and Cr-Si-Al-Zr films were investigated. When sputtered amorphous Cr-Si-Al and Cr-Si-Al-Zr films were heated up to 700°C, both of them were found to crystallize into two phases: the nanocrystalline Cr(Al,Si)2 and Si phase. For Cr-Si-Al-Zr films, zirconium atoms were also found to be dissolved in the crystallization phase Cr(Al,Si)2 in small amounts. The addition of Zr into amorphous Cr-Si-Al films inhibited the nucleation and growth of the crystallization phase, resulting in the higher annealing temperatures for Cr-Si-Al-Zr films in comparison with Cr-Si-Al films to obtain a small temperature coefficient of resistance. As a result, the Cr-Si-Al-Zr films have higher electrical stability.
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页码：236 / 240
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