Bonding of dissimilar semiconductor materials for energy-harvesting and energy-saving devices

被引：0
|
作者：
机构：
[1] Shigekawa, Naoteru
来源：
Shigekawa, Naoteru | 2017年 / Vacuum Society of Japan卷 / 60期
关键词：
Energy-saving devices - Interface characteristic - Research activities - Si devices - Single crystal diamond - Structural and electrical properties - Surface activated bonding - Wide band gap;
D O I：
10.3131/jvsj2.60.421
中图分类号：
学科分类号：
摘要：
Research activities on surface activated bonding (SAB) of dissimilar semiconductor materials for targeting advanced energy-harvesting and energy-saving devices are reviewed. The structural and electrical properties of interfaces fabricated using the SAB technologies are examined. The change in the interface characteristics due to annealing after bonding is highlighted. The characteristics of SAB-based hybrid multi-junction solar cells, SiC/Si junctions as prototypes of wide bandgap/narrow bandgap hetero structures, and single-crystal diamond/Si junctions for integrating diamond and Si devices in the future are discussed.
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