Effect of Solvent in Anodic Solution on Photoluminescence in Anodized p-Type Porous Silicon

被引：0
|
作者：
Harada, Hiroshi [1 ]
Ohwada, Takafumi [1 ]
Kondo, Kouhei [1 ]
Mitarai, Yuko [1 ]
Okuda, Soichiro [2 ]
机构：
[1] Faculty of Science and Engineering, Shimane University, 1060 Nishi-Kawatsu, Matsue 690-8504, Japan
[2] Advanced Technology R and D Center, Mitsubishi Electric Corp., 8-1-1 Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 11期
关键词：
Anodes - Bubbles (in fluids) - Correlation methods - Current density - Electrochemistry - Ethanol - Ionization of liquids - Passivation - Photoluminescence - Surface tension - Viscosity;
D O I：
10.1143/jjap.42.6835
中图分类号：
学科分类号：
摘要：
Photoluminescence (PL) of anodized porous silicon was investigated using several kinds of alcohols and deionized water as the solvent of an anodic solution. Correlation factors between PL characteristics and some physical parameters of the solvent were analyzed, which indicated that surface tension had definitive effects on PL characteristics. The peak energy and full width at half maximum of PL increased with the decrease in surface tension. Results are explained by a passivation effect of the hydrogen bubbles generated by the anodic reaction.
引用
收藏
页码：6835 / 6836
相关论文
共 50 条
  • [1] Effect of solvent in anodic solution on photoluminescence in anodized p-type porous silicon
    Harada, H
    Ohwada, T
    Kondo, K
    Mitarai, Y
    Okuda, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (11): : 6835 - 6836
  • [2] Ageing effect on photoluminescence of p-type porous silicon
    Kayahan, E
    Oskay, T
    Haciyev, F
    [J]. 12TH INTERNATIONAL SCHOOL ON QUANTUM ELECTRONICS: LASER PHYSICS AND APPLICATIONS, 2003, 5226 : 219 - 222
  • [3] Investigation on the Photoluminescence of p-Type Porous Silicon for Ultraviolet Detector
    Jie Ding
    Linghui Ge
    Xiaodong Zhu
    Jiwei Jiao
    Liqiang Zhang
    Daohan Ge
    [J]. Russian Journal of Physical Chemistry A, 2021, 95 : 2663 - 2666
  • [4] Study of photoluminescence spectrum in p-type α-porous silicon carbide
    Fundamental Physics Center, Univ. of Sci. and Technol. of China, Hefei 230026, China
    不详
    不详
    不详
    [J]. Wuli Xuebao/Acta Physica Sinica, 1998, 47 (10): : 1752 - 1753
  • [5] Photoelectrochemical and photoluminescence properties of p-type porous silicon electrode
    Uosaki, K
    Noguchi, H
    Kondo, T
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1996, 211 : 212 - PHYS
  • [6] Nucleation and growth of pores and photoluminescence in p-type porous silicon
    Pascual, A
    Fernández, JF
    Sánchez, CR
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (02) : 866 - 869
  • [7] Investigation on the Photoluminescence of p-Type Porous Silicon for Ultraviolet Detector
    Ding, Jie
    Ge, Linghui
    Zhu, Xiaodong
    Jiao, Jiwei
    Zhang, Liqiang
    Ge, Daohan
    [J]. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A, 2021, 95 (13) : 2663 - 2666
  • [8] The effect of etching temperature on the photoluminescence emitted from, and the morphology of, p-type porous silicon
    Blackwood, DJ
    Zhang, Y
    [J]. ELECTROCHIMICA ACTA, 2003, 48 (06) : 623 - 630
  • [9] Macropore formation in anodized p-type silicon
    Harada, H
    Shirahashi, T
    Nakamura, M
    Ohwada, T
    Sasaki, Y
    Okuda, S
    Hosono, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (08): : 4862 - 4863
  • [10] Photoluminescence study of porous p-type silicon: Identification of radiative transitions
    Ramirez-Gutierrez, Cristian F.
    Medina-Herrera, Andres
    Tirado-Mejia, Liliana
    Zubieta-Otero, Luis F.
    Auciello, Orlando
    Rodriguez-Garcia, Mario E.
    [J]. JOURNAL OF LUMINESCENCE, 2018, 201 : 11 - 17
12345