Design of an MTJ-based nonvolatile multi-context ternary content-addressable memory

被引：0
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作者：
Onizawa, Naoya [1 ]
Arakawa, Ren [1 ]
Hanyu, Takahiro [1 ]
机构：
[1] Research Institute of Electrical Communication, Tohoku University, Japan
来源：
Journal of Applied Logics | 2020年 / 7卷 / 01期
关键词：
In this paper; we present for the first time a design of multi-context ternary content-addressable memory (MC-TCAM) based on CMOS/magnetic tunnel junction (MTJ) devices. TCAMs are one of associative memories that realize fast search operations; where the applications are IP lookup engines and memory-based approximate computing. The multi-context capability is realized using a shared comparison circuit with multiple MTJ-based nonvolatile storage elements; resulting in a high memory density and a low static power dissipation. In addition; a CMOS-based cross-coupled circuit makes it possible to realize fast switching speed and low power dissipation; where the area overhead is negligible because of the shared structure. The proposed nonvolatile MC-TCAM with a 128 x 64 array of four contexts is designed using TSMC 65-nm CMOS and an MTJ model; which achieves a 2.6 x faster search speed and a 90−97% search-energy reduction in comparison with a single-context nonvolatile TCAM. © 2020; College Publications. All rights reserved;
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页码：89 / 109
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