Compensation method for convex corners on (100) substrate in bulk silicon wet etching process

被引：0
|
作者：
Zhang H. [1 ]
Li W. [1 ]
机构：
[1] Key Laboratory of MEMS of Ministry of Education, Southeast University
来源：
Dongnan Daxue Xuebao (Ziran Kexue Ban)/Journal of Southeast University (Natural Science Edition) | 2010年 / 40卷 / 04期
关键词：
(110) substrate; Convex corner compensation; General method; Topological field;
D O I：
10.3969/j.issn.1001-0505.2010.04.017
中图分类号：
学科分类号：
摘要：
Based on the research on (110) faced silicon substrate, a novel theoretical method which can generate perfect compensation patterns for regular convex corners is put forward. This method starts with the previous work on the basic truth of silicon atomic structure and the compensation method of (100) substrate. By refitting the intersection lines with the substrate of key related faces, such as (111), (311) and (110) in 70°C 30% KOH solution, a topological field is formed. The practical compensation patterns are transformed from the topological field within the restriction of detailed rules. This design method is verified by the computer simulation under two different modes. The simulation results are in accord with the design anticipation, which proves the validity of the method.
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收藏
页码：750 / 754
页数：4
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