Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates

被引：0
|
作者：
Funato, Mitsuru [1 ]
Ueda, Masaya [1 ]
Kawakami, Yoichi [1 ]
Narukawa, Yukio [2 ]
Kosugi, Takao [2 ]
Takahashi, Masayoshi [2 ]
Mukai, Takashi [2 ]
机构：
[1] Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
[2] Nitride Semiconductor Research Laboratory, Nichia Corporation, Tokushima 774-8601, Japan
来源：
Jpn J Appl Phys Part 2 Letter | / 24-28卷 / L659-L662期
关键词：
Compendex;
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学科分类号：
摘要：
Amber - Crystal growth - Crystal symmetry - Gallium nitride - Hydrides - Light polarization - Quantum efficiency - Semiconductor quantum wells - Substrates
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