SnO2 Separative Structure Extended Gate H+-Ion Sensitive Field Effect Transistor by the Sol-Gel Technology and the Readout Circuit Developed by Source Follower

被引：0

作者：

Chou, Jung-Chuan ^{[1
,2
]}

Kwan, Pik-Kwan ^{[1
]}

Chen, Zhi-Jie ^{[1
]}

机构：

[1] [1,Chou, Jung-Chuan

[2] Kwan, Pik-Kwan

[3] Chen, Zhi-Jie

来源：

Chou, J.-C. (Choujc@pine.yuntech.edu.tw) | 1600年 / Japan Society of Applied Physics卷 / 42期

关键词：

Acidity - Alkalinity - Current voltage characteristics - Electrochemistry - Fabrication - Gates (transistor) - Membranes - pH sensors - Readout systems - Sensitivity analysis - Sol-gels - Tin compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this study, the tin oxide membrane, fabricated by the sol-gel technology, was used as the pH-sensing layer of the extended gate H +-ion sensitive field effect transistor (EGFET) device. The sensing membrane was deposited on the silicon substrate. The cost of fabricating the EGFET device by the sol-gel technology is lower than by the other methods. The sensitivity of the sol-gel prepared tin oxide separative structure EGFET device is about 57.63 mV/pH in the range of pH1 to pH9. The readout circuit of the tin oxide EGFET was developed by the source follower.

引用

页码：6790 / 6794

共 12 条

[1] SnO2 separative structure extended gate H+-ion sensitive field effect transistor by the sol-gel technology and the readout circuit developed by source follower
Chou, JC
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (11): : 6790 - 6794
[2] Study on the carbon nanotube separative structure for the extended gate H+-ion sensitive field effect transistor
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[9] Study on Extended Gate Field Effect Transistor with Nano-TiO-2 Sensing Membrane by Sol-Gel Method
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