Hydrothermal liquid phase epitaxy of gallium orthophosphate on quartz crystal substrates

被引：0

作者：

Gleichmann, H. ^{[1
,5
]}

Richert, H. ^{[2
]}

Hergt, R. ^{[3
,6
]}

Barz, R.-U. ^{[4
]}

Grassl, M. ^{[4
]}

Görnert, P. ^{[2
]}

机构：

[1] Jena-Crystal, Jena, Germany

[2] Innovent e. V., Jena, Germany

[3] IPHT e. V., Jena, Germany

[4] LMU, München, Germany

[5] Jena-Crystal, 07768 Dehna Mühle b. Jena, Germany

[6] Institut für Physikalische Hochtechnologie e.V. (IPHT)

来源：

| 2001年 / Wiley-VCH Verlag卷 / 36期

关键词：

Epitaxial growth - Hydrothermal synthesis - Liquid phase epitaxy - Piezoelectric materials - Quartz - Solubility - Thickness measurement - Twinning - X ray analysis;

D O I：

10.1002/1521-4079(200111)36:113.0.CO;2-E

中图分类号：

学科分类号：

摘要：

Gallium orthophosphate (GaPO4) layers for surface acoustic wave (SAW) and sensor applications have been grown on quartz crystal substrates with sizes of about 30 × 30 mm2 by hydrothermal liquid phase epitaxy (HLPE). The growth of epitaxial GaPO4 layers is difficult because of a strong tendency for twinning. Besides, a retrograde solubility and an intense chemical aggressiveness of the solution has to be considered. Nevertheless, we found an effective crystal growth technique to deal with these problems using large and qualitatively good substrate crystals of quartz. The most important step of the epitaxy is the formation of an interlayer between the quartz substrate and the GaPO4 deposit. Epitaxial layers with thickness up to 500 μm were obtained and characterised by means of X-ray techniques.

引用

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