The modification of Schottky barrier height of Au/p-Si Schottky devices by perylene-diimide

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作者：
Department of Physics, Faculty of Science, Selçuk University Campus, Konya 42075, Turkey [1 ]
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机构：
[1] Yüksel, Ö.F.
[2] Tuǧluoǧlu, N.
[3] Şafak, H.
[4] 3,Kuş, M.
来源：
Yüksel, Ö.F. | 1600年 / American Institute of Physics Inc.卷 / 113期
关键词：
Perylene-diimide (PDI) thin film was fabricated by spin coating method on p-Si single-crystal substrate to prepare Au/PDI/p-Si Schottky device. The electrical properties of the Au/PDI/p-Si Schottky device were investigated by current-voltage (I-V) measurements in the temperature range 80-300 K and room temperature capacitance-voltage (C-V) measurement. Results showed a rectification behavior. Junction parameters such as ideality factor (n); barrier height (φ B 0); series resistance (R s) interface state density (N s s); built-in potential (V b i); carrier concentration (N A); and the width of the depletion layer (W D) were obtained from the I-V and C-V measurements. The values of ideality factor (n) and barrier height (BH) for the Au/PDI/p-Si structure from the I-V measurements were obtained as 1.77 and 0.584 eV at 300 K; 7.78 and 0.176 eV at 80 K; respectively. It was seen that the BH value of 0.584 eV calculated for the Au/PDI/p-Si structure was significantly larger than the value of 0.34 eV of conventional Au/p-Si Schottky diodes at room temperature. Thus; modification of the interfacial potential barrier for Au/p-Si diodes has been achieved using a thin interlayer of the peryleen-diimide organic semiconductor; this has been ascribed to the fact that the peryleen-diimide interlayer increases the effective barrier height because of the interface dipole induced by passivation of the organic layer. Furthermore; the energy distribution of the interface state density determined from I-V characteristics increases exponentially with bias from 1.11 × 1012 eV -1 cm-2 at (0.556 - E v) eV to 11.01 × 10 13 eV-1 cm-2 at (0.449 - E v) eV. © 2013 American Institute of Physics;
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