Temperature dependence of photocurrent and band gap of Cl-doped semi-insulating CdTe with evaporated Au electrodes

被引：0

作者：

Yamanaka, Sadanori ^{[1
]}

Tsushima, Shugo ^{[2
]}

Shimizu, Hidetoshi ^{[3
]}

Tokumaru, Yozo ^{[4
]}

机构：

[1] Department of Electrical, Electronic and Communication Engineering, Faculty of Science and Engineering, Chuo University, Kasuga, Bunkyo-ku, Tokyo 112-8551, Japan

[2] Sumitomo Chemical Co., Ltd., Tsukuba Research Laboratory, Kitahara, Tsukuba, Ibaraki 300-3294, Japan

[3] Tokyo Ohka Kogyo Co., Ltd., Kouza-gun, Kanagawa 253-0111, Japan

[4] Mitsubishi Electric Corporation, Kobe Works, Hyogo-ku, Kobe 652-8555, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 09期

关键词：

Amorphous materials - Chlorine - Electrodes - Energy gap - Evaporation - Gold - Photocurrents - Semiconductor doping - Semiconductor materials;

D O I：

10.1143/jjap.41.5538

中图分类号：

学科分类号：

摘要：

Photocurrent was measured as a function of wavelength for Cl-doped semi-insulating CdTe specimens with evaporated Au electrodes. It is found that the photocurrent decreased with decreasing temperature. This behavior of the photocurrent is different from that usually observed in other semiconductor specimens. Employing the theory, which was proposed for the amorphous semiconductor, we attempted to explain this phenomenon. From the photocurrent spectral peak at various temperatures, the band gap of CdTe was deduced and an empirical equation for the temperature dependence of the band gap EG(T) was obtained as EG(T) = EG(0) - αT2/(T + β), α = 5.21 × 10-4 eV/K, β = 37.5 K.

引用

页码：5538 / 5541

共 6 条

[1] Temperature dependence of photocurrent and band gap of Cl-doped semi-insulating CdTe with evaporated Au electrodes
Yamanaka, S
Tsushima, S
Shimizu, H
Tokumaru, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (09): : 5538 - 5541
[2] DISTRIBUTION OF LOCAL STATES IN THE BAND-GAP OF SEMI-INSULATING CDTE-CL CRYSTALS
ARKADEVA, EN
MATVEEV, OA
MELNIKOVA, EV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (04): : 424 - 426
[3] TEMPERATURE-DEPENDENCE OF PHOTOCURRENT IN UNDOPED SEMI-INSULATING GALLIUM-ARSENIDE
MOHAPATRA, YN
KUMAR, V
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 114 (02): : 659 - 663
[4] TEMPERATURE-DEPENDENCE OF FET PROPERTIES FOR CR-DOPED AND LEC SEMI-INSULATING GAAS SUBSTRATES
HICKMOTT, TW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 54 - 62
[5] Frequency and intensity dependence of the sub-band-gap features observed in the surface photovoltage spectrum of semi-insulating GaAs
Sharma, TK
Kumar, S
Rustagi, KC
JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) : 5959 - 5965
[6] Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence
Yang, Yingxiang
Yang, Xianghong
Liu, Kang
Huang, Jia
Sun, Yue
Li, Xin
Hu, Long
Liu, Weihua
Han, Chuanyu
Wang, Xiaoli
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (09) : 4604 - 4611

← 1 →