Effect of different annealing temperature on the fabrication of GaN nanostructures by ammoniating the Ga2O3/Al films on Si substrates

被引：0
|
作者：
Zhuang, Hui-Zhao [1 ]
Hu, Li-Jun [1 ]
Xue, Cheng-Shan [1 ]
Xue, Shou-Bin [1 ]
机构：
[1] Institute of Semiconductors, Shandong Normal University, Ji'nan 250014, China
来源：
Gongneng Cailiao/Journal of Functional Materials | 2008年 / 39卷 / 02期
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摘要：
11
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页码：331 / 333
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