Influence of IWO buffer layer on the properties of MOCVD-ZnO:B thin films

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Key Laboratory of Photoelectronic Thin Film Devices and Technology of the City of Tianjin, Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China [1 ]
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Guangdianzi Jiguang | / 4卷 / 697-702期
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