Evolution of crystal mosaicity during physical vapor transport growth of SiC

被引：0
|
作者：
Katsuno, Masakazu [1 ]
Ohtani, Noboru [1 ]
Fujimoto, Tatsuo [1 ]
Aigo, Takashi [1 ]
Yashiro, Hirokatsu [1 ]
机构：
[1] Nippon Steel Corporation, Advanced Technology Research Laboratories, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Physical vapor transport (PVT) - Physical vapor transport growth - Polytype instabilities - Surface orientations;
D O I：
10.4028/www.scientific.net/msf.389-393.55
中图分类号：
学科分类号：
摘要：
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页码：55 / 58
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