Photoexcited carrier trapping and recombination at Fe centers in GaN

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作者：
Uždavinys, T.K. [1 ]
Marcinkevičius, S. [1 ,2 ]
Leach, J.H. [3 ]
Evans, K.R. [3 ]
Look, D.C. [4 ,5 ,6 ]
机构：
[1] Department of Materials and Nano Physics, KTH Royal Institute of Technology, Electrum 229, Kista,16440, Sweden
[2] Materials Department, University of California, Santa Barbara,CA,93106, United States
[3] Kyma Technologies Inc., 8829 Midway West Road, Raleigh,NC,27617, United States
[4] Semiconductor Research Center, Wright State University, Dayton,OH,45435, United States
[5] Air Force Research Laboratory Sensors Directorate, Wright-Patterson AFB,OH,45433, United States
[6] Wyle Laboratories, Inc., 2601 Mission Point Blvd., Dayton,OH,45431, United States
来源：
Journal of Applied Physics | 2016年 / 119卷 / 21期
关键词：
Gallium nitride;
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摘要：
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