Investigation on removal of aluminum impurity in metallurgical grade silicon by electron beam melting

被引：0
|
作者：
Jiang, Da-Chuan [1 ,2 ]
Dong, Wei [1 ,2 ]
Tan, Yi [1 ,2 ]
Wang, Qiang [1 ,2 ]
Peng, Xu [1 ,2 ]
Li, Guo-Bin [1 ]
机构：
[1] Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Liaoning Dalian 116085, China
[2] School of Materials Science and Engineering, Dalian University of Technology, Liaoning Dalian 116085, China
来源：
Cailiao Gongcheng/Journal of Materials Engineering | 2010年 / 08期
关键词：
Silicon - Electron beam melting - Aluminum - Evaporation - Removal;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Aluminum impurity with high vapor pressure in metallurgical grade silicon was removed effectively by electron beam melting. Comparing the calculated value and the measure evaporation loss, the mechanism of aluminum evaporation through the surface of the molten silicon can be assumed that the removal rate-limiting step of aluminum impurity in silicon is diffusion step. In addition, the relationship between the removal amount of the aluminum and silicon loss is also discussed.
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页码：8 / 11
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