Sintering behavior and microwave dielectric properties of Mg4(Ta1-x Vx)2O9 ceramics

被引：0
|
作者：
Yao, Guo-Guang [1 ]
机构：
[1] Department of Applied Mathematics and Physics, Xi'an Institute of Post and Telecommunication, Xi'an 710021, China
来源：
Gongneng Cailiao/Journal of Functional Materials | 2008年 / 39卷 / 02期
关键词：
Crystal structure - Dielectric properties - Magnesium compounds - Nonmetallic materials - Scanning electron microscopy - Sintering - Solid solutions - Substitution reactions - Tantalum compounds - X ray diffraction analysis;
D O I：
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学科分类号：
摘要：
The sintering behavior and microwave dielectric properties of Mg4(Ta1-x Vx)2O9 (MTV) by V5+ substitution for Ta5+ were investigated. The crystalline structure and micrographs were studied by XRD and SEM, respectively. In the case of V5+ substitution for Ta5+, it is found that the limit of solid solution is lower than x=0.3, The sintering temperature of the specimens could be reduced from 1450-1150°C at expense of Q&middotf values. For x=0.1, the Mg4(Ta1-0.1 V0.1)2O9 samples sintered at 1150°C have optimum microwave dielectric properties: Ε=11, Q&middotf=41000 GHz (8 GHz).
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页码：242 / 243
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