Role of sputtered atom and ion energy distribution in films deposited by physical vapor deposition: A molecular dynamics approach

被引：0

作者：

Atmane, Soumya ^{[1
]}

Maroussiak, Alexandre ^{[1
]}

Caillard, Amael ^{[1
]}

Thomann, Anne-Lise ^{[1
]}

Kateb, Movaffaq ^{[2
]}

Gudmundsson, Jon Tomas ^{[3
,4
]}

Brault, Pascal ^{[1
,5
]}

机构：

[1] Univ Orleans, GREMI, CNRS, UMR7344, F-45067 Orleans, France

[2] Chalmers Univ, Dept Phys, Condensed Matter & Mat Theory, SE-41296 Gothenburg, Sweden

[3] Univ Iceland, Sci Inst, Dunhaga 3, IS-107 Reykjavik, Iceland

[4] KTH Royal Inst Technol, Sch Elect Engn & Comp Sci, Div Space & Plasma Phys, SE-10044 Stockholm, Sweden

[5] MS4ALL, F-45100 Orleans, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2024年 / 42卷 / 06期

关键词：

LEVEL STRESS CALCULATION; HIPIMS; GROWTH;

D O I：

10.1116/6.0004134

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a comparative molecular dynamics simulation study of copper film growth between various physical vapor deposition (PVD) techniques: a constant energy neutral beam, thermal evaporation, dc magnetron sputtering, high-power impulse magnetron sputtering (HiPIMS), and bipolar HiPIMS. Experimentally determined energy distribution functions were utilized to model the deposition processes. Our results indicate significant differences in the film quality, growth rate, and substrate erosion. Bipolar HiPIMS shows the potential for an improved film structure under certain conditions, albeit with increased substrate erosion. Bipolar HiPIMS (+180 V and 10% Cu+ ions) exhibited the best film properties in terms of crystallinity and atomic stress among the PVD processes investigated.

引用

页数：6

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