Recent progress of subwavelength photon trapping HgCdTe infrared detector

被引：0

作者：

Hu W.-D. ^{[1
]}

Liang J. ^{[1
]}

Yue F.-Y. ^{[2
]}

Chen X.-S. ^{[1
]}

Lu W. ^{[1
]}

机构：

[1] National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai

[2] Key Laboratory of Polar Materials and Devices of MOE, East China Normal University, Shanghai

来源：

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves | 2016年 / 35卷 / 01期

基金：

中国国家自然科学基金;

关键词：

HgCdTe infrared detectors; Long wavelength infrared detectors; Photon trapping; Subwavelength microstructure; Surface plasmon polaritons;

D O I：

10.11972/j.issn.1001-9014.2016.01.006

中图分类号：

学科分类号：

摘要：

Recent progress of HgCdTe infrared detector with subwavelength photon trapping structure has been reviewed in this paper. A combination approach of finite element method and finite difference time domain method, which can be used for jointly simulating of "light" and "electricity" characteristics in infrared detector, was systematically introduced. Numerical simulation and analysis results based on the HgCdTe infrared detectors with subwavelength microstructure were also demonstrated. The theoretical analysis and experimental data have shown that the subwavelength microstructure can trap photons in active region of infrared detectors. The subwavelength photon trapping structure has a promising prospect on improving the performance of long wavelength infrared detector. © 2016, Chinese Optical Society. All right reserved.

引用

页码：25 / 36and51

页数：3626

共 42 条

[1] Tang D.Y., Mi Z.Y., Introduction to Optical-electro Devices, (1989)
[2] Chu J.H., Sher A., Physics of narrow band semiconductor, Science Publisher, (2005)
[3] Rogalski A., Antoszewski J., Faraone L., Third-generation infrared photodetector arrays, J. Appl. Phys, 105, (2009)
[4] Chu J.H., Li B., Liu K., Et al., Empirical rule of intrinsic absorption spectroscopy in Hg<sub>1-x</sub>Cd<sub>x</sub>Te,, J. Appl. Phys, 75, (1994)
[5] Hu W.-D., Ye Z.-H., Liao L., Et al., A 128×128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultra-low spectral crosstalk, Opt. Lett, 39, (2014)
[6] Schaake H.F., Kinch M.A., Chandra D., Et al., High-Operating-Temperature MWIR Detector Diodes, J. Electron. Mater, 37, (2008)
[7] Hu W.D., Chen X.S., Ye Z.H., Et al., A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density Hydrogen plasma modification, Appl. Phys. Lett, 99, (2011)
[8] Wang J., Chen X.S., Hu W.D., Et al., Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors, Infra. Phys. Tech, 61, pp. 157-161, (2013)
[9] Hu W.D., Chen X.S., Ye Z.H., Et al., Dependence of ion-implant-induced LBIC novel characteristic on excitation intensity for Long-wavelength HgCdTe-based Photovoltaic Infrared Detector Pixel Arrays, IEEE J. Sel. Top. Quant. Electron, 19, (2013)
[10] Hu W.D., Chen X.S., Ye Z.H., Et al., Polarity Inversion and Coupling of Laser Beam Induced Current in As-doped Long-wavelength HgCdTe Infrared Detector Pixel Arrays: Experiment and Simulation, Appl. Phys. Lett, 101, (2012)

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