Investigation of the activation and diffusion of ion-implanted p-type and n-type dopants in germanium using high-pressure annealing

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作者：
Kuo, Tai-Chen [1 ]
Lee, Wen-Hsi [2 ]
Current, Michael Ira [3 ]
机构：
[1] Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan,320, Taiwan
[2] Department of Electrical Engineering, National Cheng Kung University, Tainan,701, Taiwan
[3] Current Scientific, San Jose,CA,95124, United States
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1600年 / 63卷 / 09期
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