Electron-beam initiated transfer of Ge from Ge islands on SiO2 surfaces to the tip of a scanning tunneling microscope

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作者：
Shklyaev, Alexander A. [1 ,2 ]
Ichikawa, Masakazu [1 ]
机构：
[1] Joint Research Center for Atom Technology (JRCAT), Angstrom Technology Partnership (ATP), 1-1-4 Higashi, Tsukuba, Ibaraki 305-0046, Japan
[2] Institute of Semiconductor Physics, Novosibirsk 630090, Russia
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| 1600年 / Japan Society of Applied Physics卷 / 40期
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