Boundary estimation of ballistic transport in the GaAs devices with submicron dimensions

被引：0
|
作者：
Zuev, S.A. [1 ]
Starostenko, V.V. [1 ]
Shadrin, A.A. [1 ]
机构：
[1] Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine
来源：
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 2002年 / 57卷 / 8-9期
关键词：
Ballistics - Electrons - Parameter estimation - Semiconducting gallium arsenide;
D O I：
10.1615/telecomradeng.v57.i8-9.120
中图分类号：
学科分类号：
摘要：
The dominating mechanisms of dissipation in a semiconductor structure based on GaAs have been considered. Time dependences of the free path velocity for the different parameters of the material and the results of estimation of the optimal velocity and the maximal length in which electrons move in the ballistic regime are represented. © 2002 Begell House, Inc.
引用
收藏
页码：99 / 104
相关论文
共 50 条
  • [1] ON THE BALLISTIC TRANSPORT IN SUBMICRON SEMICONDUCTOR DEVICES.
    Marciak-Kozlowska, Janina
    Bulletin of the Polish Academy of Sciences: Technical Sciences, 1986, 34 (3-4): : 235 - 239
  • [2] NONEQUILIBRIUM TRANSPORT IN SUBMICRON GAAS DEVICES
    TIWARI, SC
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1987, 62 (01) : 27 - 31
  • [3] POLAR MODE SCATTERING IN BALLISTIC TRANSPORT GAAS DEVICES
    MALONEY, TJ
    ELECTRON DEVICE LETTERS, 1980, 1 (04): : 54 - 54
  • [4] POLAR MODE SCATTERING IN BALLISTIC TRANSPORT GaAs DEVICES.
    Maloney, Timothy J.
    IEEE Electron Device Letters, 1980, EDL-1 (04)
  • [5] BALLISTIC AND NEAR BALLISTIC TRANSPORT IN GAAS
    SHUR, MS
    EASTMAN, LF
    ELECTRON DEVICE LETTERS, 1980, 1 (08): : 147 - 148
  • [6] BALLISTIC TRANSPORT IN GAAS
    WILLIAMS, CK
    GLISSON, TH
    LITTLEJOHN, MA
    HAUSER, JR
    IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 161 - 163
  • [7] Quantum transport in submicron devices
    Schoenmaker, W
    Magnus, W
    Profirescu, MD
    ADVANCED TOPICS IN OPTOELECTRONICS, MICROELECTRONICS, AND NANOTECHNOLOGIES, 2002, 5227 : 509 - 513
  • [8] EFFECTIVE VELOCITY-FIELD CHARACTERISTICS IN SUBMICRON GAAS-MESFETS INCLUDING NEAR BALLISTIC TRANSPORT
    YAMADA, Y
    SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1123 - 1127
  • [9] Ballistic transport and boundary scattering in InSb/In1-xAlxSb mesoscopic devices
    Gilbertson, A. M.
    Fearn, M.
    Kormanyos, A.
    Read, D. E.
    Lambert, C. J.
    Emeny, M. T.
    Ashley, T.
    Solin, S. A.
    Cohen, L. F.
    PHYSICAL REVIEW B, 2011, 83 (07)
  • [10] NEAR BALLISTIC ELECTRON-TRANSPORT IN GAAS DEVICES AT 77-DEGREES-K
    SHUR, MS
    EASTMAN, LF
    SOLID-STATE ELECTRONICS, 1981, 24 (01) : 11 - 18
12345