Effect of adduct reactions on chemical reaction path of GaN MOCVD growth

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作者：
Suzhou Institute of Technology, Jiangsu University of Science and Technology, Zhangjiagang, China [1 ]
不详 [2 ]
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来源：
Rengong Jingti Xuebao | / 12卷 / 3687-3691 and 3698期
关键词：
GaN growth - Gas reaction - Gas-phase reactions - MOCVD growth - Reaction paths - Rotating disk reactor - Species concentration;
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页码：3687 / 3691
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