Perovskite single-phase growth of epitaxial Pb(Zn1/3Nb 2/3)O3 films by alternative-source-gas-introduced metalorganic chemical vapor deposition

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Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan [1 ]
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| 1600年 / L1452-L1455卷 / November 25, 2005期
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摘要：
Epitaxial growth - Ferroelectric materials - Metallorganic chemical vapor deposition - Perovskite - Substrates - Thin films
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