Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice

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作者：

机构：

[1] Klein, Brianna

[2] Gautam, Nutan

[3] Plis, Elena

[4] Schuler-Sandy, Ted

[5] Rotter, Thomas J.

[6] Krishna, Sanjay

[7] Connelly, Blair C.

[8] Metcalfe, Grace D.

[9] Shen, Paul

[10] Wraback, Michael

来源：

| 1600年 / AVS Science and Technology Society卷 / 32期

关键词：

Antimony - Antimony compounds - III-V semiconductors - Indium antimonides - Carrier lifetime - Doping (additives) - Gallium compounds;

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摘要：

The authors report on an investigation of the dependence of the minority carrier lifetime in midwave infrared InAs/GaSb strained layer superlattices on a number of varied parameters: layer placement of two dopants (either Be or Te), and interface treatment between InAs and GaSb layers. In samples where the dopant and doping location was varied, it was found that the nonintentionally doped control sample exhibited the longest lifetimes (∼49ns at 77K under low injection), followed by the Be-doped and the Te-doped samples. Regardless of the type of doping, samples with dopants in only the InAs layer appeared to have longer lifetimes [low injection: 15ns (Be),

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Klein, Brianna
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Plis, Elena
Schuler-Sandy, Ted
Rotter, Thomas J.
Krishna, Sanjay
Connelly, Blair C.
Metcalfe, Grace D.
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