Highly Efficient N-doped Organic Light-emitting Devices

被引：0
|
作者：
Yu Y.-Y. [1 ]
Yu Y. [1 ]
Lin W.-Y. [1 ]
Wu Z.-J. [1 ]
Lin W. [1 ]
机构：
[1] College of Information Science and Engineering, Huaqiao University, Xiamen
来源：
Lin, Wei (linwei0311@hqu.edu.cn) | 2018年 / Editorial Office of Chinese Optics卷 / 39期
基金：
中国国家自然科学基金;
关键词：
B3PYPPM; CsN[!sub]3[!/sub; Current efficiency; N-dopant; Power efficiency;
D O I：
10.3788/fgxb20183903.0315
中图分类号：
学科分类号：
摘要：
For the purpose of improving the performance of organic light-emitting device (OLED), the green phosphorescent OLED was fabricated using Ir(ppy)3 as emitter and CsN3 as N-dopant doped in B3PYPPM which functioned as electron-transporting layer (ETL). The N-doped device with best performance named device B comprising ITO/HAT-CN(5 nm)/TAPC(70 nm)/TCTA: Ir(ppy)3(15%, 20 nm)/B3PYPPM(17 nm)/B3PYPPM:CsN3(10%, 63 nm)/Al was achieved by optimizing the doping concentration and the thickness of N-doped ETL. The results indicate that employing the N-doped ETL possessing proper doping concentration as well as thickness can enhance current efficiency and power efficiency dramatically. Served effectively as N-dopant in B3PYPPM, CsN3 reduces the injection barrier for electron, enhances the electron conductivity, facilitates the electron injection and transportation and enhances the charge balance, leading to the decrease in turn on and operating voltages as well as improvement on current efficiency and power efficiency. The optimized N-doped device B shows rather low turn-on voltage with the value of 2.1 V, and the maximum efficiencies are 67.0 cd/A and 91.1 lm/W respectively. It is worthwhile to point out power efficiency of device B can also reach 80.1 lm/W at high luminance of 1 000 cd/m2. © 2018, Science Press. All right reserved.
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页码：315 / 321
页数：6
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