Regulation of physicochemical characteristics on surface of SiC quantum dots and its optical properties

被引:0
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作者
Kang, Jie [1 ]
Song, Yuepeng [1 ,3 ]
Zhu, Yanmin [1 ]
Gao, Dongsheng [2 ]
Guo, Jing [1 ,3 ]
Xu, Lingfeng [1 ]
Kim, Hyoungseop [3 ]
机构
[1] Shandong Provincial Key Laboratory of Horticultural Machineries and Equipments, College of Mechanical and Electronic Engineering, Shandong Agricultural University, Tai'an,Shandong,271018, China
[2] College of Horticulture Science and Engineering, Shandong Agricultural University, Tai'an,Shandong,271018, China
[3] Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang,790-784, Korea, Republic of
关键词
D O I
10.14062/j.issn.0454-5648.2015.04.10
中图分类号
学科分类号
摘要
One-step effective regulation of physicochemical characteristics on the surface of SiC quantum dots (QDs) was obtained by a chemical coupling method via the adjustment of the component and relative content of etchant. The results indicate that the aqueous SiC-QDs are prepared with SiC nanoparticles etched in a mixed chemical etchant of nitric acid (HNO3) and hydrofluoric acid (HF) via ultrasonic cavitation dispersion and high-speed centrifugal treatment. Some hydrophilic organic functional groups, such as carboxyl (-COO), hydroxyl (-OH) and so on, on the surface of SiC-QDs are formed in the process of fabrication. In addition, hydrosulphonyl (-SH) is also prepared via one-step for sulfuric acid (HNO3) as a coupling reagent and the addition of the mixed acid (i.e., HF and HNO3). The component and relative content of mixed-acid etchant can affect the hydrosulphonyl formation and photoluminescence (PL) intensity. The results show that the maximum light intensity of SiC-QDs is emitted at a 340 nm exciting light wavelength, and the PL intensity decreases with increasing the content of H2SO4. The aqueous SiC-QDs surface prepared can be stable and coupled with -SH, thus obtaining a high photoluminescence strength, when the volume ratio of H2SO4 to HNO3 is 1:1 (i.e., V(HF):V(HNO3):V(H2SO4)= 6:1:1). In addition, the regulation of physicochemical characteristics on the surface of SiC-QDs and the formation mechanism are also analyzed. ©, 2015, Chinese Ceramic Society. All right reserved.
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页码:431 / 436
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