Impact of evaporation characteristics of SiO2 on uniformity of thin-film thickness

被引:1
|
作者
Wang N. [1 ,2 ]
Shao J. [1 ]
Yi K. [1 ]
Wei C. [1 ]
机构
[1] Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences
[2] Graduate University of Chinese Academy of Sciences
来源
关键词
Evaporation characteristics; Evaporation material of SiO[!sub]2[!/sub; Heat distribution; Production of optic thin film; Thin films;
D O I
10.3788/CJL20103708.2051
中图分类号
学科分类号
摘要
Uniformity of thin-film thickness is one of the main standards of judging optical thin film. The bad uniformity of thin film can damage the characteristics of costing system. As a main material of low refractive index to preparation of optic thin film, SiO2 is poor thermal conductivity and sublimes. The particularity of evaporation characteristic of SiO2 leads to obvious change of thin film thickness when SiO2 is evaporated by e-beam method, which affects the quality of thin film heavily. For the purpose of analyzing the impacts of evaporation characteristics of SiO2 on uniformity of thin film thickness, the heat distribution of e-beam spot is calculated and simulated, and the mass distribution is calculated. According to the mass distribution and the change of evaporation angle of point on evaporation surface, the thin film thickness distribution on spherical surface and flat surface is calculated. The reason of making the impact of evaporation characteristics of SiO2 on uniformity of thin film thickness, and the particularity of thin film thickness distribution are concluded, which offer references of adjusting and improving the technological parameters for thin film coating of SiO2 material.
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页码:2051 / 2056
页数:5
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