Growth and characterization of sol-gel prepared Gd2O3 films as gate insulators for Zn-Sn-O thin film transistors

被引：0
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作者：
Choi, Sungho [1 ]
Park, Byung-Yoon [2 ]
Jung, Ha-Kyun [1 ]
机构：
[1] Advanced Battery Materials Research Group, Korea Research Institute of Chemical Technology, 141 Gajeongro, Yuseong, Daejeon, Korea, Republic of
[2] Chemical and Electronic Materials Division, LG Electronics, Hyangjeong-dong, Heungdeok-gu, Cheongju 361-480, Korea, Republic of
来源：
Thin Solid Films | 2013年 / 535卷 / 01期
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页码：291 / 295
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