150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics

被引:0
|
作者
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 8 条
  • [1] 150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics
    Abazadze, AY
    Bezotosnyi, VV
    Gur'eva, TG
    Davydova, EI
    Zalevskii, ID
    Zverev, GM
    Lobintsov, AV
    Marmalyuk, AA
    Sapozhnikov, SM
    Simakov, VA
    Uspenskii, MB
    Shishkin, VA
    QUANTUM ELECTRONICS, 2001, 31 (08) : 659 - 660
  • [2] Quasi-cw 808-nm 300-W laser diode arrays
    Bezotosnyi, V. V.
    Kozyrev, A. A.
    Kondakova, N. S.
    Kondakov, S. A.
    Krokhin, O. N.
    Mikaelyan, G. T.
    Oleshchenko, V. A.
    Popov, Yu. M.
    Cheshev, E. A.
    QUANTUM ELECTRONICS, 2017, 47 (01) : 5 - +
  • [3] AlGaAs/GaAs laser diode bars (λ=808 nm) with improved thermal stability
    Marmalyuk, A. A.
    Ladugin, M. A.
    Andreev, A. Yu
    Telegin, K. Yu
    Yarotskaya, I. V.
    Meshkov, A. S.
    Konyaev, V. P.
    Sapozhnikov, S. M.
    Lebedeva, E. I.
    Simakov, V. A.
    QUANTUM ELECTRONICS, 2013, 43 (10) : 895 - 897
  • [4] Thermal crosstalk characteristics in high-power 808 nm AlGaAs/GaAs laser diode bars
    Qiao Yan-Bin
    Chen Yan-Ning
    Zhao Dong-Yan
    Zhang Hai-Feng
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2015, 34 (01) : 10 - 13
  • [5] Thermal characteristics of high-power, long pulse width, quasi-CW laser diode arrays
    Meadows, BL
    Amzajerdian, F
    Baker, NR
    Sudesh, V
    Singh, UN
    Kavaya, MJ
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS II, 2004, 5336 : 203 - 211
  • [6] High-power quasi-CW diode-pumped 750-nm AlGaAs VECSEL emitting a peak power of 29.6 W and an average power of 8.5 W
    Weinert, Pascal J.
    Grossmann, Marius
    Brauch, Uwe
    Jetter, Michael
    Michler, Peter
    Graf, Thomas
    Ahmed, Marwan Abdou
    OPTICS LETTERS, 2022, 47 (08) : 1980 - 1983
  • [7] Quasi-CW, High-Power, Extended-Cavity Laser Diode Microarrays (λ=976 nm) Based on Asymmetric Heterostructures with an Ultrawide Waveguide
    Slipchenko, S. O.
    Podoskin, A. A.
    Kryuchkov, V. A.
    Strelets, V. A.
    Shashkin, I. S.
    Pikhtin, N. A.
    BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2023, 50 (SUPPL 5) : S520 - S526
  • [8] Quasi-CW, High-Power, Extended-Cavity Laser Diode Microarrays (λ = 976 nm) Based on Asymmetric Heterostructures with an Ultrawide Waveguide
    S. O. Slipchenko
    A. A. Podoskin
    V. A. Kryuchkov
    V. A. Strelets
    I. S. Shashkin
    N. A. Pikhtin
    Bulletin of the Lebedev Physics Institute, 2023, 50 : S520 - S526