Hot-wall CVD growth of 4H-SiC using Si2Cl6+C 3H8+H2 system

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作者：
Miyanagi, Toshiyuki [1 ]
Nishino, Shigehiro [1 ]
机构：
[1] Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
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摘要：
7
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页码：199 / 202
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