Four-thin film transistor pixel electrode circuits for active-matrix organic light-emitting displays

被引：0
|
作者：
He, Yi [1 ,2 ]
Hattori, Reiji [1 ,3 ]
Kanicki, Jerzy [1 ]
机构：
[1] Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, United States
[2] MS 177, One AMD Place, Sunnyvale, CA 94088-3453, United States
[3] Department of Electronic Device Engineering, Graduate School of Information Science and Electrical Engineering, Kyushu University, Hakozaki 6-10-1, Higashi-ku, Fukuoka 812-8581, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 3 A期
关键词：
Amorphous silicon - Display devices - Electrodes - Light emitting diodes - Quantum efficiency - Threshold voltage;
D O I：
10.1143/jjap.40.1199
中图分类号：
学科分类号：
摘要：
Constant-current, four-thin-film-transistor (TFT) pixel electrode circuits, based on hydrogenated amorphous silicon (a-Si:H) TFT technology for active-matrix organic light-emitting displays (AM-OLEDs), have been designed, fabricated, and characterized. Experimental results indicate that continuous pixel electrode excitation can be achieved with these circuits. The pixel electrode circuits use a current driver to automatically adjust their current level for threshold voltage shifts of both the organic light-emitting devices and the drive TFT. Consequently, these pixel electrode circuits have excellent electrical reliability even when a large threshold voltage shift is present. A high output current level and a good output-input current linearity have been demonstrated with these circuits.
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页码：1199 / 1208
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