Typical electron beam doping (superdiffusion) of impurity atoms in damage-free regions of semiconductors by the kick-out mechanism

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作者：
Wada, Takao [1 ]
Fujimoto, Hiroshi [1 ]
Asada, Shigeharu [1 ]
机构：
[1] Daido Inst of Technology, Nagoya, Japan
来源：
| 2000年 / 39期
关键词：
Electron beam doping - Kick-out mechanisms - Superdiffusion technology;
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